Powered by Samsung 3D V-NAND technology. Optimized performance for everyday computing.
Incredible sequential Read/Write performance: Up to 540MB/s and 520MB/s respectively, and random Read/Write IOPS performance: Up to 97K and 88K respectively.
Strengthen RAPID mode to enter a fast lane that gains a 2 times of performance improvement.
3D V-NAND technology brings up to 30% endurance improvement compared to 840 EVO. Endurance, reliability.
Better efficiency and longer service time whose power consumption only a half of 2D NAND. All these are backed by 3D V-NAND technology.